Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum-Reference-Cited by-同舟云学术

Influences of surface treatment on In0.53Ga0.47As epitaxial layer grown on silicon substrate using trimethylaluminum

Published:2018-01 Issue: Volume:646 Page:173-179
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kim Soo Bin,Lee Seung Hyun,Jung Hae Jun,Seo Myung Su,Kim Sung Min,Lee Soonil,Park Ji-Yong,Park Tae Joo,Jeong Hae-Yong,Jun Dong-Hwan,Park Kyung Ho,Park Won-Kyu,Lee Sang Woon

Funder

Korea Institute of Energy Technology Evaluation and Planning

MOTIE

KSRC

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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5. High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1A/mm;Xuan;IEEE Electron Device Lett.,2008

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