Low-resistance Al-based reflectors for high-power GaN-based flip-chip light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1894614
Reference20 articles.
1. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
2. High-power AlGaInN flip-chip light-emitting diodes
3. Illumination with solid state lighting technology
4. Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes
5. Low Resistance and Reflective Mg-Doped Indium Oxide–Ag Ohmic Contacts for Flip-Chip Light-Emitting Diodes
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1. Strategically constructed high-reflectivity multiple-stack distributed Bragg reflectors for efficient GaN-based flip-chip mini-LEDs;Journal of Physics D: Applied Physics;2023-04-18
2. Monolithic Light Reflector‐Nanowire Light Emitting Diodes;Advanced Materials Technologies;2021-01-14
3. Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diode;ECS Journal of Solid State Science and Technology;2020-02-10
4. High-Performance Green Flip-Chip LEDs with Double-Layer Electrode and Hybrid Reflector;ECS Journal of Solid State Science and Technology;2019
5. Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall;Crystals;2018-11-08
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