Oblique-Angle Deposited SiO2/Al Omnidirectional Reflector for Enhancing the Performance of AlGaN-Based Ultraviolet Light-Emitting Diode
Author:
Funder
National Research Foundation of Korea
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ab709a/pdf
Reference31 articles.
1. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp
2. The emergence and prospects of deep-ultraviolet light-emitting diode technologies
3. Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array
4. High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes
5. Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes
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