High-Efficiency Top-Emitting III-Nitride LEDs
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-0436-3_3
Reference34 articles.
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3. Lee JH, Oh JT, Kim YC et al (2008) Stress reduction and enhanced extraction efficiency of GaN-based LED grown on cone-shape-patterned sapphire. IEEE Photonics Technol Lett 20(18):1563–1565
4. Chiu CH, Yen HH, Chao CL et al (2008) Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template. Appl Phys Lett 93(8):081108
5. Liao C, Wu YCS (2009) InGaN-GaN light emitting diode performance improved by roughening indium tin oxide window layer via natural lithography. Electrochem Solid State Lett 13(1):J8
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