Low Resistance and Reflective Mg-Doped Indium Oxide–Ag Ohmic Contacts for Flip-Chip Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Low Resistance and Reflective Mg-Doped Indium Oxide–Ag Ohmic Contacts for Flip-Chip Light-Emitting Diodes

Published:2004-06 Issue:6 Volume:16 Page:1450-1452
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:en
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Song J.-O.,Leem D.-S.,Kwak J.S.,Nam O.H.,Park Y.,Seong T.-Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/28893/01300628.pdf?arnumber=1300628

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1. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01

2. Effect of annealing temperature and capping ligands on the electron mobility and electronic structure of indium oxide nanocrystal thin films: a comparative study with oleic acid, benzoic acid, and 4-aminobenzoic acid;Physical Chemistry Chemical Physics;2023

3. Demonstration of ohmic contact using ${{\rm MoO}_{\rm x}}/{\rm Al}$MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs;Optics Letters;2020-04-15

4. High-Performance Green Flip-Chip LEDs with Double-Layer Electrode and Hybrid Reflector;ECS Journal of Solid State Science and Technology;2019

5. High Reliability of Ag Reflectors with AgCu Alloy for High Efficiency GaN-Based Light Emitting Diodes;Journal of Nanoscience and Nanotechnology;2018-09-01

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