Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123468
Reference14 articles.
1. Trap‐limited interstitial diffusion and enhanced boron clustering in silicon
2. Oxidation enhanced diffusion in Si B‐doping superlattices and Si self‐interstitial diffusivities
3. A systematic analysis of defects in ion-implanted silicon
4. Defect evolution in MeV ion-implanted silicon
5. Pre-amorphization damage in ion-implanted silicon
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