Affiliation:
1. SB RAS
2. Russian Academy of Sciences
3. Joint Institute for Nuclear Research
4. Institute of Electron Technology
5. IHP
Abstract
Transformations of the SiGe/Si superlattice structures, either annealed at high pressure, or irradiated by high energy ions and subjected to post-implantation annealing, were studied and compared. Both types of treatments were found to lead to the formation of recharged defects clusters, resulting in the appearance of peaks on C-V characteristics, shrinkage of Ge profiles registered by SIMS technique after annealing, and disappearance of peaks in the free carrier profiles. The effects were more pronounced in the case of high energy ion implantation. The results are explained by the vacancy - assisted precipitation of Ge in SiGe layers.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics