Influence of Ge concentration and compressive biaxial stress on interdiffusion in Si-rich SiGe alloy heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1828240
Reference37 articles.
1. Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
2. Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
3. Thermal stability of undoped strained Si channel SiGe heterostructures
4. Diffusion of Ge in Si1-xGex/Si single quantum wells in inert and oxidizing ambients
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