Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions
Author:
Publisher
Pleiades Publishing Ltd
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1134/S106378260605006X.pdf
Reference18 articles.
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