DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

Published:2016-06 Issue:2 Volume:2 Page:48-50
ISSN:2452-1779
Container-title:Modern Electronic Materials
language:en
Short-container-title:Modern Electronic Materials

Author:

Poklonski Nikolai A.,Gorbachuk Nikolay I.,Shpakovski Sergey V.,Filipenia Viktor A.,Turtsevich Arkady S.,Shvedov Sergey V.,Vo Quang Nha,Binh Nguyen Thi Thanh,Skuratov Vladimir A.,Wieck Andreas D.

Funder

BRFFR

GPNI “Electronics and Photonics”

Publisher

Pensoft Publishers

Subject

Automotive Engineering

Reference18 articles.

1. Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250MeV krypton implantation;Poklonski;Physica B,2009

2. Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions;Poklonski;Nucl. Instrum. Methods B,2008

3. Irradiation effects of 35 MeV lithium and 70 MeV oxygen ions on the hole lifetime and the forward current of silicon diodes;Sathyavathi;Solid State Commun.,1998

4. Irradiation effects of high energy heavy ions on the switching characteristics of p-n junction diodes;Bhave;Nucl. Instrum. Methods B,1997

5. Ion Implantation and Synthesis of Materials;Nastasi,2006

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy;Journal of Materials Science;2023-06-26

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP