Formation and Annealing of Nano-sized Atomic Clusters in n-Si Crystals Irradiated with High-Energy Protons

Author:

Pagava Temur,Chkhartishvili Levan,Beridze Manana

Publisher

Springer Netherlands

Reference31 articles.

1. Pagava TA, Chkhartishvili LS (2004) Oscillatory dependence of electron Hall mobility on the annealing temperature for irradiated silicon. Ukr J Phys 49(10):1006–1008

2. Pagava T, Chkhartishvili L, Maisuradze N (2006) Concentrations of radiation defects with almost isoenergetical levels in silicon. Radiat Eff Defects Solids 161(12):709–713

3. Pagava TA, Maisuradze NI (2010) Anomalous scattering of electrons in n-Si crystals irradiated with protons. Semiconductors 44(2):151–154

4. Pagava TA, Maisuradze NI (2010) Scattering of electrons in n-Si crystals irradiated with protons by nanoscale inclusions. Nano Stud 1:97–102

5. Pagava TA, Maisuradze NI, Beridze MG (2011) Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals. Semiconductors 45(5):572–576

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