Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals-Reference-Cited by-同舟云学术

Effect of a high-energy proton-irradiation dose on the electron mobility in n-Si crystals

Published:2011-05 Issue:5 Volume:45 Page:572-576
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Pagava T. A.,Maisuradze N. I.,Beridze M. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378261105023X.pdf

Reference19 articles.

1. R. F. Konopleva, V. L. Litvinov, and N. A. Ukhin, Radiation Damage of Semiconductors by Energetic Particles (Atomizdat, Moscow, 1971) [in Russian].

2. B. R. Gossick, J. Appl. Phys. 30, 1214 (1959).

3. I. D. Konozenko, A. K. Semenyuk, and V. I. Khivrich, Radiation Effectes in Silicon (Nauk. dumka, Kiev, 1974) [in Russian].

4. N. A. Ukhin, Fiz. Tekh. Poluprovodn. 6, 931 (1972) [Sov. Phys. Semicond. 6, 804 (1972)].

5. L. S. Milevskii, T. M. Tkacheva, and T. A. Pagava, Zh. Eksp. Teor. Fiz. 69, 2132 (1975) [Sov. Phys. JETP 42, 1084 (1975)].

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