Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1601678
Reference13 articles.
1. Impurity gettering to secondary defects created by MeV ion implantation in silicon
2. Spatial distribution of defects in ion-implanted and annealed Si: The RP/2 effect
3. Gettering issues using MeV ion implantation
4. Implantation of si under extreme conditions: The effects of high temperature and dose on damage accumulation
5. The production and stability of implantation-induced vacancy excesses in silicon
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3. Optical properties and surface damage studies of crystalline silicon caused by swift iron ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-05
4. Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure;Journal of Applied Physics;2009-04
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