Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3093912
Reference41 articles.
1. Multicrystalline Silicon for Solar Cells: Process Development by Numerical Simulation
2. Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)
3. Atomic and Electronic Structure of a Dissociated 60° Misfit Dislocation inGexSi(1−x)
4. Atomic and electronic structures of the 90° partial dislocation in silicon
5. Electronic states associated with dislocations inp-type silicon studied by means of electric-dipole spin resonance and deep-level transient spectroscopy
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1. Applicability of molecular statics simulation to partial dislocations in GaAs;Solid State Communications;2020-07
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3. Interstitial iron impurities at cores of dissociated dislocations in silicon;Physical Review B;2015-11-24
4. Influence of dislocation strain fields on the diffusion of interstitial iron impurities in silicon;Physical Review B;2015-09-22
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