Atomic and electronic structures of the 90° partial dislocation in silicon-Reference-Cited by-同舟云学术

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Atomic and electronic structures of the 90° partial dislocation in silicon

Published:1992-10-12 Issue:15 Volume:69 Page:2224-2227
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Bigger J. R. K.,McInnes D. A.,Sutton A. P.,Payne M. C.,Stich I.,King-Smith R. D.,Bird D. M.,Clarke L. J.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.69.2224/fulltext

Reference26 articles.

1. The dissociation of dislocations in silicon

2. Dislocations in semiconductors

3. Dislocation core studies in empirical silicon models

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