Millisecond flash lamp annealing of shallow implanted layers in Ge-Reference-Cited by-同舟云学术

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Millisecond flash lamp annealing of shallow implanted layers in Ge

Published:2009-12-21 Issue:25 Volume:95 Page:252107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wündisch C.,Posselt M.,Schmidt B.,Heera V.,Schumann T.,Mücklich A.,Grötzschel R.,Skorupa W.,Clarysse T.,Simoen E.,Hortenbach H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3276770

Reference21 articles.

1. Ion-implantation issues in the formation of shallow junctions in germanium

2. Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers

3. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals

4. Intrinsic and dopant-enhanced solid-phase epitaxy in amorphous germanium

5. Kinetics of solid phase crystallization in amorphous silicon

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