Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359033
Reference30 articles.
1. AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy
2. Growth and characterization of high‐quality In0.32Ga0.68P layers on GaAs0.61P0.39substrates by liquid‐phase epitaxy
3. Amphoteric behavior of germanium in In0.5Ga0.5P grown by liquid phase epitaxy
4. Growth and characterization of single‐heterostructure AlGaAs/InGaP red light‐emitting diodes by liquid‐phase epitaxy
5. Room‐temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy
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1. Oxygen impurities in Ga-0.In-51(0).P-49 grown by solid-source molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2002
2. Oxygen-related deep level defects in solid-source MBE grown GaInP;Journal of Crystal Growth;2001-07
3. Influence of oxygen incorporation on beryllium- and silicon-doped InP grown by solid source molecular beam epitaxy;Fourth International Conference on Thin Film Physics and Applications;2000-11-29
4. Electron mobility in In0.5Ga0.5P;Journal of Applied Physics;1998-06
5. Semiconductor based light emitters powered by tritium;Applied Physics Letters;1997-11-03
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