Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations
Author:
Affiliation:
1. XLIM Laboratory, CNRS, UMR 7252, University of Limoges, F-19100 Brive, France
Funder
Agence Nationale de la Recherche
Direction Générale de l’Armement
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0064493
Reference55 articles.
1. Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
2. Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
3. Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer
4. Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers
5. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities
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3. Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
4. HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μm AlGaN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2023-05
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