Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations

Author:

Bouslama Mohamed1ORCID,Raja P. Vigneshwara1,Gaillard Florent1,Sommet Raphael1,Nallatamby Jean-Christophe1ORCID

Affiliation:

1. XLIM Laboratory, CNRS, UMR 7252, University of Limoges, F-19100 Brive, France

Funder

Agence Nationale de la Recherche

Direction Générale de l’Armement

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs;Chemistry – A European Journal;2024-03-26

2. Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review;Micromachines;2023-10-31

3. Comparison of Drain Current Transient Characteristics of AlGaN/GaN HEMTs in the Linear and Saturation Regions after OFF-state Stress;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

4. HTRB Stress Effects on Static and Dynamic Characteristics of 0.15 μm AlGaN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2023-05

5. Examination of Trapping Effects on Single-Event Transients in GaN HEMTs;IEEE Transactions on Nuclear Science;2023-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3