Examination of Trapping Effects on Single-Event Transients in GaN HEMTs-Reference-Cited by-同舟云学术

Examination of Trapping Effects on Single-Event Transients in GaN HEMTs

Published:2023-04 Issue:4 Volume:70 Page:328-335
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Nelson Tolen¹^ORCID,Georgiev Daniel G.¹^ORCID,Hontz Michael R.²,Khanna Raghav¹^ORCID,Ildefonso Adrian³^ORCID,Koehler Andrew D.³,Hobart Karl³^ORCID,Khachatrian Ani³^ORCID,McMorrow Dale³^ORCID

Affiliation:

1. EECS Department, The University of Toledo, Toledo, OH, USA

2. Naval Surface Warfare Center, Philadelphia Division, Philadelphia, PA, USA

3. U.S. Naval Research Laboratory, Washington, DC, USA

Funder

National Aeronautics and Space Administration (NASA) Jet Propulsion Laboratory

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10103954/09941500.pdf?arnumber=9941500

Reference37 articles.

1. A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$ HEMTs using Two-Photon Absorption and Heavy Ions

2. Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs

3. The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs

4. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs

5. Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique

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1. Ultrathin-Body GaN-on-Sapphire HEMT With Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 10¹⁰ rad(Si)/s;IEEE Electron Device Letters;2024-08

2. Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage;Journal of Science: Advanced Materials and Devices;2024-06

3. Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode;Microelectronics Journal;2024-02

4. Investigation of SiNx Passivated Dual Field Plate AlGaN/GaN HEMTs on Silicon Carbide and Sapphire Substrates Under Radiation Environment;Silicon;2023-05-16