Author:
Rossetto Isabella,Bisi Davide,de Santi Carlo,Stocco Antonio,Meneghesso Gaudenzio,Zanoni Enrico,Meneghini Matteo
Publisher
Springer International Publishing
Reference167 articles.
1. Umana-Membreno GA, Dell JM, Hessler TP, Nener BD, Parish G, Faraone L, Mishra UK (2002) 60Co gamma-irradiation-induced defects in n-GaN. Appl Phys Lett 80(23):4354–4356
2. Soh CB, Chua SJ, Lim HF, Chi DZ, Liu W, Tripathy S (2004) Identification of deep levels in GaN associated with dislocations. J Phys Condens Matter 16(16):6305–6315
3. Chung HM, Chuang WC, Pan YC, Tsai CC, Lee MC, Chen WH, Chen WK, Chiang CI, Lin CH, Chang H (2000) Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy. Appl Phys Lett 76(7):897–899
4. Park YS, Lee M, Jeon K, Yoon IT, Shon Y, Im H, Park CJ, Cho HY, Han M-S (2010) Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al 0.2 Ga 0.8 N/GaN interface and the rapid thermal annealing effect. Appl Phys Lett 97:112110
5. Look DC, Fang Z-Q, Claflin B (2005) Identification of donors, acceptors, and traps in bulk-like HVPE GaN. J Cryst Growth 281(1):143–150
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献