Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section
Author:
Funder
Engineering and Physical Sciences Research Council
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4793196
Reference21 articles.
1. Punch-through in short-channel AlGaN/GaN HFETs
2. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
3. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
4. Physical Mechanism of Buffer-Related Current Transients and Current Slump in AlGaN/GaN High Electron Mobility Transistors
5. Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
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