Experimental evidence for dislocation-related gettering in metamorphic InP∕InGaAs high electron mobility transistor (HEMT) structures on GaAs substrate-Reference-Cited by-同舟云学术

Experimental evidence for dislocation-related gettering in metamorphic InP∕InGaAs high electron mobility transistor (HEMT) structures on GaAs substrate

Published:2006-08 Issue:3 Volume:100 Page:034505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu Yuwei,Wang Hong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2222004

Reference20 articles.

1. Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

2. Thermal stability of InP-based high electron mobility transistor epitaxial wafers

3. Annealing effect on the carrier concentration in heavily Si‐dopedn+‐InGaAs

4. Reliability Improvement of AlInAs/GaInAs High Electron Mobility Transistors by Fluorine Incorporation Control

5. Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors

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1. Effects of in-situ thermal annealing on metamorphic InGaAs photodetector materials grown by molecular beam epitaxy;Materials Science in Semiconductor Processing;2023-10

2. Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well;Semiconductors;2015-09

3. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well;Semiconductors;2015-02

4. Selective area growth of InP on lithography-free, nanopatterned GaAs(001) by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-01

5. AZO-Gated Al[sub 0.2]Ga[sub 0.8]As∕In[sub 0.2]Ga[sub 0.8]As High Electron Mobility Transistors;Electrochemical and Solid-State Letters;2010