Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1433174
Reference12 articles.
1. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
2. Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
3. Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications
4. Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz
5. Metamorphic In/sub 0.4/Al/sub 0.6/As/In/sub 0.4/Ga/sub 0.6/As HEMTs on GaAs substrate
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3. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015
4. Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures;Journal of the Korean Vacuum Society;2011-11-30
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