Annealing effect on the carrier concentration in heavily Si‐dopedn+‐InGaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108371
Reference7 articles.
1. A study of Ge/GaAs interfaces grown by molecular beam epitaxy
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3. Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers
4. A new self-aligned AlGaAs/GaAs HBT based on refractory emitter and base electrodes
5. Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
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1. Modeling and Simulation of Capacitance–Voltage Characteristics of a Nitride GaAs Schottky Diode;Journal of Electronic Materials;2018-06-05
2. N-type Doping Strategies for InGaAs;Materials Science in Semiconductor Processing;2017-05
3. WITHDRAWN: N-type doping strategies for InGaAs;Materials Science in Semiconductor Processing;2017-01
4. Indium oxide: A transparent, conducting ferromagnetic semiconductor for spintronic applications;Journal of Magnetism and Magnetic Materials;2016-10
5. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
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