Author:
Stall R. A.,Wood C. E. C.,Board K.,Dandekar N.,Eastman L. F.,Devlin J.
Subject
General Physics and Astronomy
Cited by
77 articles.
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1. In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09
2. Germanium: Epitaxy and its applications;Progress in Crystal Growth and Characterization of Materials;2010-09
3. Ohmic Contacts to II–VI and III–V Compound Semiconductors;Processing of Wide Band Gap Semiconductors;2000
4. Ohmic contacts to GaAs epitaxial layers;Critical Reviews in Solid State and Materials Sciences;1997-09
5. Novel low‐resistance ohmic contact ton‐type GaAs using Cu3Ge;Applied Physics Letters;1994-12-19