Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
Author:
Affiliation:
1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India
Funder
Council of Scientific and Industrial Research (CSIR), India
Indian Institute of Science (IISc), India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902892
Reference32 articles.
1. Growth of GaN(0001)1×1 on Al2O3(0001) by gas‐source molecular beam epitaxy
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5. Electronic structures of polar and nonpolar GaN surfaces
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