The growth and properties of group III nitrides-Reference-Cited by-同舟云学术

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The growth and properties of group III nitrides

Published:1995-05 Issue: Volume:150 Page:892-896
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Foxon C.T.,Cheng T.S.,Novikov S.V.,Lacklison D.E.,Jenkins L.C.,Johnston D.,Orton J.W.,Hooper S.E.,Baba-Ali N.,Tansley T.L.,Tret'yakov V.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs

3. MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

4. Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments

5. Molecular‐beam‐epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap engineering and modulation of thermodynamic, and optical properties of III-N monolayers XN (X = In, Ga & Al) by mutual alloying;Physica Scripta;2022-08-11

2. First-principles calculation of band-gaps reduction in GaAsN alloys and (110) growth axis GaAs/GaN superlattice;Chinese Journal of Physics;2016-02

3. Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy;Journal of Applied Physics;2014-11-28

4. Spectroscopic ellipsometry studies of reactively sputtered nitrogen-rich GaAsN films;Journal of Non-Crystalline Solids;2011-09

5. Alternation of band gap and localization of excitons in InGaNAs nanostructures with low nitrogen content;Nanotechnology;2008-06-24

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