Molecular‐beam‐epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111190
Reference15 articles.
1. Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine
2. GaN Growth Using GaN Buffer Layer
3. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
4. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
5. Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
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