Cubic GaN films grown below the congruent sublimation temperature of (0 0 1) GaAs substrates by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Cubic GaN films grown below the congruent sublimation temperature of (0 0 1) GaAs substrates by plasma-assisted molecular beam epitaxy

Published:2016-03 Issue:2 Volume:34 Page:02L115
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Alanís Arturo¹,Vilchis Heber¹,López Edgar¹,Vidal Miguel A.¹

Affiliation:

1. Coordinación para la Innovación y la Aplicación de la Ciencia y la Tecnología, Universidad Autónoma de San Luis Potosí, Sierra Leona # 550 Lomas 2da Sección, San Luis Potosí 78210, México

Funder

CEMIE-SOL

Consejo Nacional de Ciencia y Tecnología (CONACYT)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4943661

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