Strain‐induced nonlinear energy‐band splitting of Si1−xGexalloys coherently grown on (111) and (110) oriented Ge substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104359
Reference15 articles.
1. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
2. Symmetrically strained Si/Ge superlattices on Si substrates
3. Resonant tunneling of variously strained Si/GexSi1−x/Si heterostructures
4. Intersubband infrared absorption in GexSi1−x/Si superlattice by photocurrent measurement
5. Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates
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