Significant effect of carrier concentration on spin lifetime at low temperatures in strained Si<sub>0.1</sub>Ge<sub>0.9</sub>-Reference-Cited by-同舟云学术

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Significant effect of carrier concentration on spin lifetime at low temperatures in strained Si_0.1Ge_0.9

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)
language:
Short-container-title:

Author:

Kawashima K.¹,Naito T.¹,Yamada M.²,Okada T.¹,Wagatsuma Y.³,Sawano K.³,Hamaya K.¹

Affiliation:

1. Osaka University,Graduate School of Engineering Science,Toyonaka, Osaka,Japan,560-8531

2. Osaka University,Center for Spintronics Research Network,Toyonaka, Osaka,Japan,560-8531

3. Tokyo City University,Advanced Research Laboratories,Setagaya, Tokyo,Japan,158-0082

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10228191/10228192/10228652.pdf?arnumber=10228652

Reference13 articles.

1. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

2. Strain‐induced nonlinear energy‐band splitting of Si1−xGexalloys coherently grown on (111) and (110) oriented Ge substrates

3. Electrical detection of spin precession in a metallic mesoscopic spin valve

4. Semiconductor spintronics with Co2-Heusler compounds

5. Donor-Driven Spin Relaxation in Multivalley Semiconductors

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