Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1575934
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide
3. Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate
4. Atomic Layer Chemical Vapor Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate Precursor
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