Infrared Surface Plasmons Open a Hole Tunneling Channel in Metal–Oxide–Semiconductor Structures-Reference-Cited by-同舟云学术

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Infrared Surface Plasmons Open a Hole Tunneling Channel in Metal–Oxide–Semiconductor Structures

Published:2023-08-08 Issue:9 Volume:10 Page:3321-3330
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Amiri Naeini Maryam Sadat¹²^ORCID,Berini Pierre¹²³^ORCID

Affiliation:

1. Department of Physics, University of Ottawa, 150 Louis-Pasteur Pvt., Ottawa, Ontario K1N 6N5, Canada

2. Nexus for Quantum Technologies Institute-NEXQT, University of Ottawa, 25 Templeton Street, Ottawa, Ontario K1N 6N5, Canada

3. School of Electrical Engineering and Computer Science, University of Ottawa, 800 King Edward Avenue, Ottawa, Ontario K1N 6N5, Canada

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c00766

Reference49 articles.

1. Theoretical predictions for hot-carrier generation from surface plasmon decay

2. Plasmon-induced hot carrier science and technology

3. Fundamental limits of hot carrier injection from metal in nanoplasmonics

4. Plasmonic hot carrier dynamics in solid-state and chemical systems for energy conversion

5. Plasmonic Photoelectrochemistry: In View of Hot Carriers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Speed Electro-Optic Plasmonic Modulator for CMOS Non-Contact Wafer-Level Testing;IEEE Journal of Selected Topics in Quantum Electronics;2024-07

2. Hot‐carrier engineering for two‐dimensional integrated infrared optoelectronics;InfoMat;2024-05-13

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