Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy

Published:2015-09-21 Issue:12 Volume:107 Page:121602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chichibu S. F.¹,Miyake H.²^ORCID,Ishikawa Y.¹,Furusawa K.¹,Hiramatsu K.³

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan

2. Graduate School of Regional Innovation Studies, Mie University, Tsu 514-8507, Japan

3. Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

Funder

The Asahi Glass Foundation, Japan

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4931754

Reference40 articles.

1. The Blue Laser Diode

2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

3. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

4. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

5. Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate;Applied Physics Letters;2023-05-15

2. Room-temperature nonradiative recombination lifetimes in c-plane Al_1−xIn_xN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21);Journal of Applied Physics;2022-10-28

3. 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities;Applied Physics Express;2022-04-22

4. Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2021-12-28

5. Fablication of AlN templates by high-temperature face-to-face annealing for deep UV LEDs;Japanese Journal of Applied Physics;2021-12-01