Nitrogen incorporation in SiO2by rapid thermal processing of silicon and SiO2in N2O
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108995
Reference9 articles.
1. Excellent charge-trapping properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
2. Electrical and physical characteristics of thin nitrided oxides prepared by rapid thermal nitridation
3. Correlation between electron trap density and hydrogen concentration in ultrathin rapidly reoxidized nitrided oxides
4. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
5. Highly reliable thin nitrided SiO2 films formed by rapid thermal processing in an N2O ambient
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1. Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N 2 O gas;Materials Science in Semiconductor Processing;2017-11
2. Oxynitridation of Si(100) surface with thermally excited N2O gas;Thin Solid Films;2006-04
3. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits;Journal of Applied Physics;2001-09
4. Depth Profile Analysis of Ultrathin Silicon Oxynitride Films by ToF-SIMS;Journal of The Electrochemical Society;2000
5. Characterization of silicon oxynitride thin films by x-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
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