Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes-Reference-Cited by-同舟云学术

Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

Published:2012-06-04 Issue:23 Volume:100 Page:231110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kawaguchi Yoshinobu,Huang Chia-Yen,Wu Yuh-Renn,Yan Qimin,Pan Chih-Chien,Zhao Yuji,Tanaka Shinichi,Fujito Kenji,Feezell Daniel,Van de Walle Chris G.,DenBaars Steven P.,Nakamura Shuji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4726106

Reference27 articles.

1. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes

2. Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

3. Origin of efficiency droop in GaN-based light-emitting diodes

4. Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths

5. Green ThinGaN power-LED demonstrates 100 lm

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