Plastic relaxation of InGaAs grown on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105684
Reference6 articles.
1. Misfit dislocations and critical thickness of heteroepitaxy
2. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
3. Geometrical theory of critical thickness and relaxation in strained‐layer growth
4. A photoluminescence study of indium desorption from strained Ga1−xInxAs/GaAs
5. On the origin of misfit dislocations in InGaAs/GaAs strained layers
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