Introduction of misfit dislocations into strained-layer GaAs/InxGa1–xAs/GaAs heterostructures by mechanical bending-Reference-Cited by-同舟云学术

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Introduction of misfit dislocations into strained-layer GaAs/InxGa1–xAs/GaAs heterostructures by mechanical bending

Published:2020-09-28 Issue:12 Volume:128 Page:125708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu X. W.¹,Hopgood A. A.¹²^ORCID

Affiliation:

1. Faculty of Technology, University of Portsmouth, Portland Building, Portland Street, Portsmouth PO1 3AH, United Kingdom

2. Faculty of Science, Technology, Engineering, and Mathematics, The Open University, Walton Hall, Milton Keynes, MK7 6AA, United Kingdom

Funder

Open University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0016476

Reference36 articles.

1. The impact of strained layers on current and emerging semiconductor laser systems

2. Relationship between dislocations and misfit strain relaxation in InGaAs/GaAs heterostructures

3. GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

4. Lasing in strained germanium microbridges

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tc and resistivity variation induced by external bending strain in flexible film of strain-sensitive (La,Sr)2CuO4;Physical Review Materials;2024-09-12

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