A photoluminescence study of indium desorption from strained Ga1−xInxAs/GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
2. 4th Intern. Conf. on Molecular Beam Epitaxy;Whitehouse,1986
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