Concentration‐dependent near and above band edge absorption in doped InP and its effect on solar cell modeling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360128
Reference13 articles.
1. Radiation damage in InP single crystals and solar cells
2. Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
3. Single‐crystal thin film InP: Fabrication and absorption measurements
4. Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV
5. Optical Studies of the Band Structure of InP
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1. Dynamic nuclear self-polarization for measurements of nuclear magnetic moments;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-12
2. Photon assisted Lévy flights of minority carriers in n-InP;Journal of Luminescence;2012-08
3. Radiation efficiency of heavily doped bulk n-InP semiconductor;Journal of Applied Physics;2010-07
4. Electrical and optical characterization of a Zn-implanted InP laser annealed in a nitrogen atmosphere;Semiconductor Science and Technology;2007-02-13
5. Growth of polycrystalline InP thin films by the pulsed laser deposition technique;Thin Solid Films;2006-07
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