Radiation efficiency of heavily doped bulk n-InP semiconductor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3455874
Reference29 articles.
1. R. K. Arhenkiel, in Properties, Processing and Applications of Indium Phosphide, edited by T. P. Pearsall (INSPEC, London, 1999), p. 105.
2. Time‐resolved photoluminescence of undoped InP
3. Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP
4. Minority carriers recombination inn-InP single crystals
5. Semiconductor high-energy radiation scintillation detector
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