Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.9108/fulltext
Reference35 articles.
1. Low dark-current, high gain GaInAs/InP avalanche photodetectors
2. Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodes
3. A 64-bit 800-MHz insulated-gate CCD on InP
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