n‐SnO <i> <sub>x</sub> </i> as a Transparent Electrode and Heterojunction for p‐InP Nanowire Light Emitting Diodes-Reference-Cited by-同舟云学术

n‐SnO _x as a Transparent Electrode and Heterojunction for p‐InP Nanowire Light Emitting Diodes

Published:2022-04-07 Issue:11 Volume:10 Page:2102690
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Gagrani Nikita¹,Vora Kaushal²,Adhikari Sonachand¹,Jiang Yuxin¹,Jagadish Chennupati¹³^ORCID,Tan Hark Hoe¹³

Affiliation:

1. Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra ACT 2601 Australia

2. Australian National Fabrication Facility ACT Node Research School of Physics The Australian National University Canberra ACT 2601 Australia

3. ARC Centre of Excellence for Transformative Meta‐Optical Systems Research School of Physics The Australian National University Canberra ACT 2601 Australia

Funder

Australian Research Council

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202102690

Reference53 articles.

1. ZnOp-InP heterojunction solar cells

2. 19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

3. Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

4. n ITO/p InP : a photo and electroluminescent diode

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