Photon assisted Lévy flights of minority carriers in n-InP-Reference-Cited by-同舟云学术

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Photon assisted Lévy flights of minority carriers in n-InP

Published:2012-08 Issue:8 Volume:132 Page:1935-1943
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Semyonov Oleg,Subashiev Arsen V.,Chen Zhichao,Luryi Serge

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference34 articles.

1. Photoluminescence 1: theory;Barry Bebb,1972

2. Reabsorption, band‐gap narrowing, and the reconciliation of photoluminescence spectra with electrical measurements for epitaxialn‐InP

3. The luminescence lineshape of highly doped direct-gap III-V compounds

4. Picosecond time-resolved luminescence studies of surface and bulk recombination processes in InP

5. Spontaneous Radiative Recombination in Semiconductors

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lévy noise effects on Josephson junctions;Chaos, Solitons & Fractals;2021-12

2. Josephson-based Threshold Detector for Lévy-Distributed Current Fluctuations;Physical Review Applied;2019-04-24

3. Effects of Lévy noise on the dynamics of sine-Gordon solitons in long Josephson junctions;Journal of Statistical Mechanics: Theory and Experiment;2016-05-20

4. Effects of thermal treatment on radiative properties of HVPE grown InP layers;Solid-State Electronics;2014-05

5. Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP;Journal of Luminescence;2014-03

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