Electrical and optical characterization of a Zn-implanted InP laser annealed in a nitrogen atmosphere
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Experimental Conditions Required to Achieve Low-Power Pulsed-Laser Annealing of Implanted GaAs
2. Solid-phase epitaxy induced by low-power pulsed-laser annealing of III-V compound semiconductors
3. Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere
4. Low-Power Pulsed-Laser Annealing of the Damaged Surface Layer of Chemomechanically Polished CdS
5. Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing
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