Experimental Conditions Required to Achieve Low-Power Pulsed-Laser Annealing of Implanted GaAs-Reference-Cited by-同舟云学术

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Experimental Conditions Required to Achieve Low-Power Pulsed-Laser Annealing of Implanted GaAs

Published:1992-07-15 Issue:Part 1, No. 7 Volume:31 Page:2049-2055
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Vitali Gianfranco

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review;Materials;2023-12-16

2. Electrical and optical characterization of a Zn-implanted InP laser annealed in a nitrogen atmosphere;Semiconductor Science and Technology;2007-02-13

3. The kinetics of point defects in low-power pulsed laser annealing of ion-implanted CdTe∕CdMnTe double quantum well structures;Journal of Applied Physics;2005-10-15

4. Temperature and ion flux dependence of damage structures in Zn+ implanted and laser annealed GaAs;Journal of Physics D: Applied Physics;2002-10-22

5. High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs;Journal of Applied Physics;2000-08-15

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