Dynamic junction temperature measurement for high power light emitting diodes
Author:
Funder
Program for New Century Excellent Talents in University (China)
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624699
Reference10 articles.
1. Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN
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3. In Situ Measurement of the Junction Temperature of Light Emitting Diodes Using a Flexible Micro Temperature Sensor
4. High power light-emitting diode junction temperature determination from current-voltage characteristics
5. Y. Q. Zong and Y. S. Ohno, in Proceedings of the CIE Expert Symposium on Advances in Photometry, Turin, Italy, June 9–12, 2008, CIE x033, p. 102.
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