Low temperature grown GaNAsSb: A promising material for photoconductive switch application-Reference-Cited by-同舟云学术

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Low temperature grown GaNAsSb: A promising material for photoconductive switch application

Published:2013-09-09 Issue:11 Volume:103 Page:111113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tan K. H.,Yoon S. F.,Wicaksono S.,Loke W. K.,Li D. S.,Saadsaoud N.,Tripon-Canseliet C.,Lampin J. F.,Decoster D.,Chazelas J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4820797

Reference24 articles.

1. On-chip pulsed terahertz systems and their applications

2. LT-GaAs detector with 451 fs response at 1.55 [micro sign]m via two-photon absorption

3. Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe

4. Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer

5. Material properties of Ga0.47In0.53As grown on InP by low‐temperature molecular beam epitaxy

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural evaluation of GaAs1−Bi obtained by solid-phase epitaxial growth of amorphous GaAs1−Bi thin films deposited on (0 0 1) GaAs substrates;Journal of Crystal Growth;2023-01

2. Crystalline quality of GaAs_1−xBi_x grown below 250 °C using molecular beam epitaxy;Applied Physics Express;2022-03-23

3. Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters;Sensors;2021-04-30

4. Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers;Semiconductor Science and Technology;2020-10-06

5. Crystalline quality of low-temperature-grown In Ga1−As coherently grown on InP(0 0 1) substrate;Journal of Crystal Growth;2020-08

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