Crystalline quality of low-temperature-grown In Ga1−As coherently grown on InP(0 0 1) substrate-Reference-Cited by-同舟云学术

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Crystalline quality of low-temperature-grown In Ga1−As coherently grown on InP(0 0 1) substrate

Published:2020-08 Issue: Volume:544 Page:125703
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tominaga Yoriko,Hirose Shingo,Hirayama Kentaro,Morioka Hitoshi,Ikenaga Noriaki,Ueda Osamu

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan

Research Institute for Nanodevice and Bio Systems at Hiroshima University

MEXT/JSPS KAKENHI

Japan Synchrotron Radiation Research Institute

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Nature of Conduction in Doped Silicon

2. Electrical characterization to 4 THz ofN‐ andP‐type GaAs using THz time‐domain spectroscopy

3. Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN

4. Carrier dynamics of electrons and holes in moderately doped silicon

5. Picosecond GaAs‐based photoconductive optoelectronic detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy;Materials;2024-02-09

2. Structural evaluation of low-temperature-grown InGaAs crystals on (0 0 1) InP substrates;Journal of Crystal Growth;2020-10

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