Structural evaluation of low-temperature-grown InGaAs crystals on (0 0 1) InP substrates-Reference-Cited by-同舟云学术

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Structural evaluation of low-temperature-grown InGaAs crystals on (0 0 1) InP substrates

Published:2020-10 Issue: Volume:548 Page:125852
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ueda Osamu,Ikenaga Noriaki,Hirose Shingo,Hirayama Kentaro,Tsurisaki Shunsuke,Horita Yukihiro,Tominaga Yoriko

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT) KAKENHI

the Nanotechnology Platform Program of MEXT

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference40 articles.

1. Carrier dynamics of electrons and holes in moderately doped silicon

2. Measurement of Electrical Properties of GaN Thin Films Using Terahertz-Time Domain Spectroscopy

3. Measurement of the properties of GaN layers using terahertz time-domain spectroscopic ellipsometry

4. Picosecond GaAs‐based photoconductive optoelectronic detectors

5. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy;Materials;2024-02-09

2. High Resistivity and High Mobility in Localized Beryllium-Doped InAlAs/InGaAs Superlattices Grown at Low Temperature;Crystals;2023-09-24

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